 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FF1N30HS60DD May 2003 FF1N30HS60DD 30A, 600V StealthTM Diode General Description The FF1N30HS60DD is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Fully Isolated Package (2,500 volt AC) * Extremely Low Switching Losses * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched CCM PFC Boost Diode * UPS and Motor Drive Free Wheeling Diode * SMPS FWD * Snubber Diode Package JEDEC SOT-227 Symbol K K A A Device Maximum Ratings (per diode) TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG Md TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 110oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Mounting force Terminal connection torque Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 30 70 325 136 20 -55 to 175 1.5/13 1.5/13 300 260 Units V V V A A A W mJ C Nm/lb.in. Nm/lb.in. C C CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD Package Marking and Ordering Information Device Marking FF1N30HS60DD Device FF1N30HS60DD Package SOT-227 Tape Width Quantity 10 Electrical Characteristics (per diode) TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25C TC = 125C 2.1 1.7 2.4 2.1 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 120 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 30A, dIF/dt = 100A/s, VR = 30V IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR = 390V, TC = 125C 27 36 36 2.9 55 110 1.9 6 450 60 1.25 21 730 800 35 45 A nC A/s A nC ns ns ns ns A nC ns Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SOT-227 1.1 12 C/W C/W (c)2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD Typical Performance Curves 60 175 C 50 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 150oC 40 125 C 30 o o 5000 175oC 1000 25oC 150oC 125oC 100 100oC 75oC 10 20 100oC 10 1 25oC 0.1 100 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, FORWARD VOLTAGE (V) 200 300 400 500 600 VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 100 90 80 t, RECOVERY TIMES (ns) 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 IF, FORWARD CURRENT (A) ta AT dIF/dt = 200A/s, 500A/s, 800A/s VR = 390V, TJ = 125oC tb AT dIF/dt = 200A/s, 500A/s, 800A/s Figure 2. Reverse Current vs Reverse Voltage 120 VR = 390V, TJ = 125oC 100 t, RECOVERY TIMES (ns) tb AT IF = 60A, 30A, 15A 80 60 40 20 ta AT IF = 60A, 30A, 15A 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 20 VR = 390V, TJ = 125oC 18 16 14 12 10 8 dIF/dt = 200A/s 6 4 0 10 20 30 40 50 60 dIF/dt = 800A/s IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 30 Figure 4. ta and tb Curves vs dIF/dt VR = 390V, TJ = 125oC 25 IF = 30A 20 IF = 60A dIF/dt = 500A/s IF = 15A 15 10 5 0 200 400 600 800 1000 1200 1400 1600 IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF/dt (c)2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR 2.5 IF = 60A 2.25 2.0 1.75 1.5 1.25 1.0 0.75 0.5 200 IF = 15A IF = 30A VR = 390V, TJ = 125oC QRR, REVERSE RECOVERED CHARGE (nC) 1200 VR = 390V, TJ = 125oC 1000 IF = 60A 800 IF = 30A 600 IF = 15A 400 400 600 800 1000 1200 1400 1600 200 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 1000 Figure 8. Reverse Recovered Charge vs dIF/dt 35 IF(AV) , AVERAGE FORWARD CURRENT (A) 0.1 1 10 100 30 25 20 15 10 5 0 105 115 125 135 145 155 165 175 VR , REVERSE VOLTAGE (V) TC, CASE TEMPERATURE CJ , JUNCTION CAPACITANCE (pF) 800 600 400 200 0 Figure 9. Junction Capacitance vs Reverse Voltage 2.0 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 10. DC Current Derating Curve THERMAL IMPEDANCE ZJA, NORMALIZED 0.1 PDM t1 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 10-5 10-4 10-3 10-2 10-1 100 101 t2 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance (c)2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD Test Circuit and Waveforms Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms (c)2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
Price & Availability of FF1N30HS60DD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |